IndiumV3, Main, Repository, bibRecord, 008342

Structural defects in Si-doped III-V nitrides

Identifieur interne : 008342 ( Main/Repository ); précédent : 008341; suivant : 008343

Structural defects in Si-doped III-V nitrides

Auteurs : RBID : Pascal:06-0537228

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Microscopie électronique transmission, Gravure sélective, Dopage, Formation défaut, Dépôt chimique phase vapeur, Méthode MOCVD, Dislocation, Interstitiel, Croissance cristalline en phase vapeur, Addition silicium, Gallium nitrure, Indium nitrure, Composé ternaire, Semiconducteur III-V, Composé binaire, Hétérostructure, Couche épaisse, InGaN, Ga In N, GaN, Ga N, 6172V, 8115G, Substrat Al2O3.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Binary compounds, CVD, Crystal growth from vapors, Defect formation, Dislocations, Doping, Experimental study, Gallium nitrides, Heterostructures, III-V semiconductors, Indium nitrides, Interstitials, MOCVD, Selective etching, Silicon additions, Ternary compounds, Thick films, Transmission electron microscopy.

Abstract

Transmission electron microscopy has been used to study undoped and Si-doped InGaN/GaN layers. The doped layers show formation of extrinsic dislocation loops. These defects are not formed in the undoped samples. The highly Si-doped layers show failure of selective photoelectrochemical wet-etching used for device fabrication. This loss of etching selectivity is attributed to Si-induced defects evenly distributed in the InGaN layers and their vicinities.

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Le document en format XML

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<author><name sortKey="Zakharov, Dmitri N" uniqKey="Zakharov D">Dmitri N. Zakharov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory</s1>
<s2>CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Liliental Weber, Zuzanna" uniqKey="Liliental Weber Z">Zuzanna Liliental-Weber</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory</s1>
<s2>CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
</affiliation>
</author>
<author><name>YAN GAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials and ERATO/JST UCSB Group, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hu, Evelyn" uniqKey="Hu E">Evelyn Hu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials and ERATO/JST UCSB Group, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Santa Barbara, CA 93106</wicri:noRegion>
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<publicationStmt><idno type="inist">06-0537228</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0537228 INIST</idno>
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<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>CVD</term>
<term>Crystal growth from vapors</term>
<term>Defect formation</term>
<term>Dislocations</term>
<term>Doping</term>
<term>Experimental study</term>
<term>Gallium nitrides</term>
<term>Heterostructures</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Interstitials</term>
<term>MOCVD</term>
<term>Selective etching</term>
<term>Silicon additions</term>
<term>Ternary compounds</term>
<term>Thick films</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Microscopie électronique transmission</term>
<term>Gravure sélective</term>
<term>Dopage</term>
<term>Formation défaut</term>
<term>Dépôt chimique phase vapeur</term>
<term>Méthode MOCVD</term>
<term>Dislocation</term>
<term>Interstitiel</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Addition silicium</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Composé ternaire</term>
<term>Semiconducteur III-V</term>
<term>Composé binaire</term>
<term>Hétérostructure</term>
<term>Couche épaisse</term>
<term>InGaN</term>
<term>Ga In N</term>
<term>GaN</term>
<term>Ga N</term>
<term>6172V</term>
<term>8115G</term>
<term>Substrat Al2O3</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Transmission electron microscopy has been used to study undoped and Si-doped InGaN/GaN layers. The doped layers show formation of extrinsic dislocation loops. These defects are not formed in the undoped samples. The highly Si-doped layers show failure of selective photoelectrochemical wet-etching used for device fabrication. This loss of etching selectivity is attributed to Si-induced defects evenly distributed in the InGaN layers and their vicinities.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Structural defects in Si-doped III-V nitrides</s1>
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<fA11 i1="02" i2="1"><s1>LILIENTAL-WEBER (Zuzanna)</s1>
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<fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Department of Materials and ERATO/JST UCSB Group, University of California</s1>
<s2>Santa Barbara, CA 93106</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Transmission electron microscopy has been used to study undoped and Si-doped InGaN/GaN layers. The doped layers show formation of extrinsic dislocation loops. These defects are not formed in the undoped samples. The highly Si-doped layers show failure of selective photoelectrochemical wet-etching used for device fabrication. This loss of etching selectivity is attributed to Si-induced defects evenly distributed in the InGaN layers and their vicinities.</s0>
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<s5>03</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Selective etching</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
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<fC03 i1="10" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>10</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Addition silicium</s0>
<s5>12</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Silicon additions</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>16</s5>
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<s2>NK</s2>
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<s5>20</s5>
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<s5>21</s5>
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<s5>21</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>Ga In N</s0>
<s4>INC</s4>
<s5>53</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>6172V</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8115G</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Substrat Al2O3</s0>
<s4>INC</s4>
<s5>92</s5>
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<s5>48</s5>
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Structural defects in Si-doped III-V nitrides

Structural defects in Si-doped III-V nitrides

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri